FABRICATION OF 0.13-MU-M DEVICE PATTERNS BY ARGON FLUORIDE EXCIMER-LASER LITHOGRAPHY WITH PRACTICAL RESOLUTION ENHANCEMENT TECHNIQUES

This paper presents the formation results of 0.13-mu m device patterns using argon fluoride (ArF) excimer laser lithography that does not in corporate strong resolution enhancement techniques such as levenson ty pe phase-shifting mask or quadrupole illumination, Device patterns of 0.13-mu m can be fabricated by ArF excimer laser lithography when a hi gh performance single-layer photoresist, an anti-reflective layer, an attenuated phase-shifting mask with an off-axis illumination are used. A 0.5-mu m depth-of-focus with a 10.8% exposure latitude can be obtai ned. Furthermore: 0.12-mu m-rule gate patterns of memory and logic dev ices can be fabricated. A 1.0-mu m depth-of-focus for a 0.13-mu m patt ern will be achieved.