ADVANCED TRENCH AND LOCAL OXIDATION OF SILICON (LOCOS) ISOLATION TECHNOLOGY FOR ULTRA-LOW-POWER BULK DYNAMIC THRESHOLD METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (B-DTMOS)

We have developed a novel deep trench and local oxidation of silicon ( LOGOS) isolation technology termed SITOS II in order to isolate the sh allow-well regions necessary for realizing a, high speed dynamic thres hold metal oxide semiconductor field effect transistor (MOSFET) in a b ulk wafer. Using this simple isolation technology, suppression of bird s-beak formation, low junction leakage current, high punch-through vol tage between shallow-wells, and sub-threshold transistor characteristi cs without kinks were achieved.