50 NM PATTERN ETCHING OF SI WAFER BY SYNCHROTRON-RADIATION EXCITED CF4 PLASMA

50 nm lines and spaces pattern etching on a Si wafer in a synchrotron radiation (SR) excited CF4 gas atmosphere was performed under a negati ve bias voltage in which the SR light beam was irradiated perpendicula rly to the Si wafer. As etching species, positive ions are expected to be predominant. The SR excited plasma and the excited species are dis cussed.