FABRICATION OF FLAT END MIRROR ETCHED BY FOCUSED ION-BEAM FOR GAN-BASED BLUE-GREEN LASER-DIODE

Heteroepitaxial GaN film was deposited on sapphire by metalorganic che mical vapor deposition. mirror for the GaN-based blue-green laser diod e was prepared using focused ion beam (FIB) etching. The tilt angle no rmal to the GaN layer was shown to be less than 1 degrees by scanning loll microscopy. The root mean square surface roughness was 11 Angstro m as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green la ser diodes.