CALIXARENE ELECTRON-BEAM RESIST FOR NANO-LITHOGRAPHY

New electron beam (EB) resists made of calixarene resists are introduc ed. Typical sensitivities of calixarene resists range from 700 mu C/cm (2) to 7 mC/cm(2). High-density dot arrays with 15 nm diameter constru cted using calixarene resist were easily delineated using a point EB l ithography system. Our results suggest that the resolution Limit of ca lixarene resists is dominated by a development process such as adhesio n to a substrate rather than by the EB profile. Calixarene resists are resistant to etching by halide plasma. We also demonstrated nanoscale devices processed by using calixarene resists. Calixarene resists are promising materials for nanofabrication.