MAGNETOOPTIC WAVE-GUIDE WITH SIO2 CLADDING LAYER INTEGRATED ON INP SUBSTRATE BY WAFER DIRECT BONDING

Magnetooptic waveguides with a SiO2 cladding layer mere fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct b onding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding tvas achieved by surface treatment of both wafers and subsequent heat treatment in H-2 ambient. By applying heat treatment in H-2 ambient at temperatures ranging between 110 and 220 d egrees C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.