EFFECT OF UTILIZING HYDROGEN-TREATED TANTALUM ANODIZED OXIDATION ON SYMMETRY OF CURRENT-VOLTAGE CHARACTERISTIC OF METAL-INSULATOR-METAL ELEMENT

The symmetry of current-voltage (I-V) characteristic of the metal-insu lator-metal (MIM) element with the insulator of tantalum anodic oxidat ion TaOx which is heat-treated in hydrogen (hydrogen-treated) is great ly improved. Meanwhile, the symmetric I-V characteristic, unlike that of the conventional MIM element with tantalum anodic oxidation TaOx wh ich is heat-treated in vacuum (vacuum-treated) or in an oxygen atmosph ere, is independent of the choice or top-electrode material. In additi on, the making process of the MIM element, with hydrogen-treated TaOx film is less than that of the conventional MIM element with vacuum-tre ated TaOx film. Considering the oxide layer structure, we present a no vel p-n(-)-n band model for MIM element to explain these experimental phenomena.