The dependence curve of the resonance frequency shift of a dynamic mod
e atomic force microscope (AFM) cantilever on the distance between the
tip and the sample is examined. For a system sith clean semiconductor
sample and a metal-coated tip, the obtained curve exhibited a larger
frequency shift compared to one with a uncoated Si tip, and an increas
ing deviation from van der Waals characteristics as the separation dec
reased. This is due to an additional attractive force which becomes do
minant at a small separation. This force is considered to play a cruci
al role in high-resolution imaging of semiconductor surfaces with a dy
namic made AFM.