Mj. Pan et al., SUPEROXIDATION AND ELECTROCHEMICAL REACTIONS DURING SWITCHING IN PB(ZR,TI)O-3 CERAMICS, Journal of the American Ceramic Society, 79(11), 1996, pp. 2971-2974
Under ferroelectric switching in Pb(Zr,Ti)O-3 (PZT) ceramics, me demon
strate that oxygen gas is emitted and degrades electrode microstructur
e, The oxygen is a direct result of the defect chemistry associated wi
th superoxidation which is established during the processing of the ce
ramics, Under high alternating electric fields, electron injection int
o the ceramic surface induces a reduction process, and surface layers
are believed to change from ap-type electronic compensation to an ioni
c compensation of oxygen vacancies and A-site lead vacancies. During t
his process, me noticed progressive changes in capacitance, loss, remn
ant polarization, and coercive field, The wider implications of this o
bservation for PZT thin film nonvolatile memories are discussed in bri
ef.