AN ALGAAS GAAS HBT PA-LNA TRANSCEIVER MMIC CHIP FOR 1.9 GHZ PHS DIGITAL CORDLESS TELEPHONES/

The first results of a GaAs heterojunction bipolar transistor (HBT) po wer amplifier (PA)-low noire amplifier (LNA) integrated MMIC transceiv er, developed for the Japanese 1.9 GHz personal handyphone system (PHS ) digital cordless telephone, are reported. The MMIC is fully operatio nal from a single 3.3 V supply including a digitally controlled DC pow er-down capability, and was evaluated in a 16-lead PSOP package with i ntegrated ground slug and matched on a PCB using low cost resistors, c apacitors and inductors. The two-stage PA provides a gain of 24.4 dB a nd a linear output power of 21.8 dBm with an adjacent-channel power (A CP) of -52 dBc at +/- 600 kHz offset, which satisfies the PHS specific ations. The HBT transmit/receive (T/R) MMIC achieves a linear power-ad ded efficiency (PAE) of 31 percent that is comparable to previously re ported PA-LNA MMIC transceivers based on GaAs FET technology but ir fo ur-to seven-times smaller in area.(1,2) The HBT LNA provides 12.8 dB g ain, a noise figure of 1.6 dB and a third-order intercept point (IP3) of 12 dBm while consuming less than 7 mA of bias current. The LNA and PA can be powered down with less than 10 mu A of standby current witho ut relying on a negative supply. This performance is believed to be am ong the best plastic-packaged results of an integrated PA-LNA transcei ver MMIC developed for the 1.9 GHz PHS.