Ferroelectric lead lanthanum titanate (PLT) thin films with various la
nthanum concentration were fabricated by sol-gel spin-on process onto
Pt/Ti/SiO2/Si substrates. We investigated the crystal structure, micro
structure, and dielectric and ferroelectric properties of PLT films ac
cording to lanthanum doping concentration. The films annealed at 600 d
egrees C for 30 min have the single perovskite phase having only tetra
gonal or pseudocubic structure. The film microstructures were changed
according to the doping concentration of La. The PLT films showed the
typical polarization-electric field hysteresis loops and capacitance-v
oltage characteristics representing the ferroelectric switching proper
ty. The coercive field and remanent polarization decreased due to the
phase transformation from ferroelectric to paraelectric phase with inc
reasing La concentration. The effective dielectric constant and the le
akage current density increased according to the increase of La conten
t. (C) 1998 American Institute of Physics.