BISTABLE ELECTROLUMINESCENCE IN P-I-N LIGHT-EMITTING TUNNEL-DIODES ENHANCED BY APERIODIC-SUPERLATTICE INJECTORS

A p-i-n resonant tunnel diode is designed and investigated using photo luminescence (PL) spectroscopy. The device is based on an Al0.4Ga0.6As /GaAs graded-index waveguide heterostructure enhanced by aperiodic-sup erlattice injectors for simultaneous resonant injection of electrons a nd heavy holes. The bias-dependent study of photocurrent, electrolumin escence (EL) and PL show strong resonance behavior in the optical inte nsity confirming the field-dependent resonant injection of the excited states in the emission layers. Pronounced voltage-current bistability due to injection efficiency leads to multiple-wavelength EL and lasin g action. (C) 1998 American Institute of Physics.