RESONANCE RAMAN-SCATTERING IN HIGH-QUALITY ZNTE EPILAYERS GROWN BY HOT-WALL EPITAXY

Resonant Raman scattering spectra for high-quality ZnTe epilayers grow n by hot-wall epitaxy have been studied extensively. With a 514.5-nm A r-ion laser as the excitation source, three resonant Raman lines were observed. The temperature characteristics of these three Raman lines w ere related to those of the energy gap of ZnTe. Also, it was confirmed that the strain which remained in the ZnTe/GaAs epilayers was tensile due to the different thermal expansion coefficients.