MODELING OF THE SOLID LAYER GROWTH FROM MELT CRYSTALLIZATION - THE INTEGRAL FORMULATION APPROACH

Citation
A. Chianese et N. Santilli, MODELING OF THE SOLID LAYER GROWTH FROM MELT CRYSTALLIZATION - THE INTEGRAL FORMULATION APPROACH, Chemical Engineering Science, 53(1), 1998, pp. 107-111
Citations number
10
Categorie Soggetti
Engineering, Chemical
ISSN journal
00092509
Volume
53
Issue
1
Year of publication
1998
Pages
107 - 111
Database
ISI
SICI code
0009-2509(1998)53:1<107:MOTSLG>2.0.ZU;2-O
Abstract
This work deals with the mathematical simulation of the solid-layer gr owth from solid-layer melt crystallization by applying the integral fo rmulation approach. The mathematical model here proposed has been appl ied to the prediction of the growth of a crystal on a cylindrical cold surface in contact with a stirred melt. Three systems, i.e, pure epsi lon-caprolactam, mixtures of epsilon-caprolactam and water and pure na phtalene, have been examined. The data for the first two systems have been obtained by means of an easy experimental procedure. In all cases the proposed model provided a very good prediction of the experimenta l data. Finally, a comparison was made between the prediction of the c rystal-layer growth by means of the developed model and a simplified q uasi-steady state one. (C) 1997 Elsevier Science Ltd.