CD SELF-DOPING OF CDTE POLYCRYSTALLINE FILMS BY COSPUTTERING OF CDTE-CD TARGETS

Cadmium self-doped CdTe polycrystalline films were grown on Coming gla ss substrates at room temperature by cosputtering from a CdTe-Cd targe t. The electrical, structural, and optical properties of the films wer e analyzed as a function of the Cd concentration, Films with a stoichi ometric composition, and slightly below and above it, were prepared, I n films where the Te exceeds 50 at. %, it is found segregation of Te a nd its electrical resistivity is about 10(7) Ohm cm, In those with an excess of Cd, the electrical resistivity drops several orders of magni tude, the carrier concentration increases, and the resistivity activat ion energy drops. From these results, we concluded that using this dep osition method, n-type Cd self-doped CdTe polycrystalline films can be produced. (C) 1998 American Institute of Physics. [S0021-8979(98)0170 1-0].