THICKNESS MONITORING OF GAAS GROWTH BY SURFACE PHOTOABSORPTION IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION

We have monitored monolayer (ML) growth of GaAs at 650 degrees C by me talorganic chemical vapor deposition using surface photoabsorption (SP A). AlGaAs quantum well (QW) structures were grown by monitoring SPA o scillations. Photoluminescence measurements of these QWs show excellen t agreement between the observed spectra and model calculations in bot h peak energies and Line width, confirming that the growth rate was 1 ML per cycle and that the roughness at the interface was < 1 ML. (C) 1 998 American Institute of Physics. [S0021-8979(98)01202-X].