CONSTANT-RESISTANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY IN SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

This article describes a new variation of a deep-level transient spect roscopy (DLTS) technique convenient for the measurement of submicron f ield-effect transistors where standard capacitance DLTS cannot be used . Constant-resistance (CR) DLTS is similar to the conductance DLTS, bu t it is more sensitive and it does not require simultaneous measuremen t of the transconductance g(m) or surface mobility mu for calculation of the trap concentrations. In addition, the DLTS signal is largely in dependent of the transistor size, thus allowing measurements of very s mall-size transistors. The proposed technique is not restricted to met al-oxide-semiconductor field-effect transistors, but can be used also to study other field-effect transistors. (C) 1998 American Institute o f Physics. [S0021-8979(98)01902-1].