ELECTRON-TRANSPORT IN WURTZITE INDIUM NITRIDE

We present the velocity-field characteristics of wurtzite indium nitri de, determined using an ensemble Monte Carlo approach. It is found tha t indium nitride exhibits an extremely high peak drift velocity at roo m temperature, 4.3 X 10(7) cm/s, at a doping concentration of 1.0 X 10 (17) cm(-3). We also demonstrate that the saturation drift velocity of indium nitride, 2.5 X 10(7) cm/s, is comparable to that of gallium ni tride, and much larger than that of gallium arsenide. Our results sugg est that the transport characteristics of indium nitride are superior to those of gallium nitride and gallium arsenide, over a wide range of temperatures, from 150 to 500 K, and doping concentrations, up to 1.0 X 10(19) cm(-3). Hence, indium nitride has considerable potential for device applications. (C) 1998 American Institute of Physics. [S0021-8 979(98)02202-6].