Mwj. Prins et al., GRAIN-BOUNDARY-LIMITED TRANSPORT IN SEMICONDUCTING SNO2 THIN-FILMS - MODEL AND EXPERIMENTS, Journal of applied physics, 83(2), 1998, pp. 888-893
We present a model that describes grain-boundary-limited conduction in
polycrystalline semiconductors, for thermally assisted ballistic as w
ell as diffusive transport, both for degenerate and nondegenerate dopi
ng. In addition to bulk parameters (the carrier effective mass and mea
n free path) the model contains grain boundary parameters (barrier hei
ght and width) and a coefficient of current nonuniformity. Temperature
-dependent conductivity and Hall measurements on polycrystalline SnO2
thin films with different Sb concentrations are consistently interpret
ed. (C) 1998 American Institute of Physics. [S0021-8979(98)01302-4].