IMPROVEMENT OF THE STABILITY UNDER ILLUMINATION OF A-SI-H FILMS ELABORATED BY ION-BEAM-ASSISTED EVAPORATION USING A HYDROGEN-ARGON PLASMA

Authors
RINNERT H VERGNAT M MARCHAL G BURNEAU A
Citation
H. Rinnert et al., IMPROVEMENT OF THE STABILITY UNDER ILLUMINATION OF A-SI-H FILMS ELABORATED BY ION-BEAM-ASSISTED EVAPORATION USING A HYDROGEN-ARGON PLASMA, Journal of applied physics, 83(2), 1998, pp. 1103-1106
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
83
Issue
2
Year of publication
1998
Pages
1103 - 1106
Database
ISI
SICI code
0021-8979(1998)83:2<1103:IOTSUI>2.0.ZU;2-U
Abstract
Hydrogenated amorphous silicon films were deposited by ion-beam-assist ed evaporation using a hydrogen-argon plasma. The influence of the sub strate temperature was studied. Light induced photoconductivity decay measurements showed that high stability materials can be obtained unde r well defined conditions. By combined infrared spectrometry and therm al desorption spectrometry experiments, it was demonstrated that micro structure has a great influence on the stability against light induced defects. (C) 1998 American Institute of Physics.