MINIBANDS OF P-TYPE DELTA-DOPING SUPERLATTICES IN GAAS

The minibands of p-type delta-doping superlattices (SLs) in GaAs are s tudied ill dependence on acceptor sheet doping concentrations N-A and SL periods d. The calculations rely on effective mass theory, applied to the Gamma(8) valence band hole gas. Hole-hole interaction is self-c onsistently taken into account, including the exchange-correlation whi ch is considered in the local density approximation. The miniband edge s of the various heavy and light hole bands, the Fermi level, and the potential well barriers and bottoms are plotted against N-A with d as parameter and against d with N-A as parameter. In this way we provide complete band structure information for optical and transport measurem ents on p-type delta-doping superlattices. (C) 1997 Academic Press Lim ited.