Md. Benoy et B. Pradeep, PREPARATION AND CHARACTERIZATION OF INDIUM OXIDE (IN2O3) FILMS BY ACTIVATED REACTIVE EVAPORATION, Bulletin of Materials Science, 20(8), 1997, pp. 1029-1038
The electrical and optical properties of In2O3 films prepared at room
temperature by activated reactive evaporation have been studied. Hall
effect measurements at room temperature show that the films have a rel
atively high mobility 15 cm(2)v(-1)s(-1), high carrier concentration 2
.97 x 10(20)/cm(3), with a low resistivity rho = 1.35 x 10(-3) ohm cm.
As-prepared him is polycrystalline. It shows both direct and indirect
allowed transitions with band gaps of 3.52 eV and 2.94eV respectively
.