PREPARATION AND CHARACTERIZATION OF INDIUM OXIDE (IN2O3) FILMS BY ACTIVATED REACTIVE EVAPORATION

Authors
BENOY MD PRADEEP B
Citation
Md. Benoy et B. Pradeep, PREPARATION AND CHARACTERIZATION OF INDIUM OXIDE (IN2O3) FILMS BY ACTIVATED REACTIVE EVAPORATION, Bulletin of Materials Science, 20(8), 1997, pp. 1029-1038
Citations number
24
Journal title
Bulletin of Materials Science → ACNP
ISSN journal
02504707
Volume
20
Issue
8
Year of publication
1997
Pages
1029 - 1038
Database
ISI
SICI code
0250-4707(1997)20:8<1029:PACOIO>2.0.ZU;2-E
Abstract
The electrical and optical properties of In2O3 films prepared at room temperature by activated reactive evaporation have been studied. Hall effect measurements at room temperature show that the films have a rel atively high mobility 15 cm(2)v(-1)s(-1), high carrier concentration 2 .97 x 10(20)/cm(3), with a low resistivity rho = 1.35 x 10(-3) ohm cm. As-prepared him is polycrystalline. It shows both direct and indirect allowed transitions with band gaps of 3.52 eV and 2.94eV respectively .