EFFECT OF HEAVY-ION IRRADIATION ON DIELECTRIC-CONSTANT AND ELECTRICAL-CONDUCTIVITY OF DOPED AND UNDOPED NONLINEAR SUBSTANCE

Implantations were carried out on gel-grown potassium dihydrogen ortho phosphate (KDP) and those doped with magnesium oxide (MgO) single crys tals using 100 MeV Ag+ heavy-ion beam of 15 UD 16 MV pelletron acceler ator. To conduct a comparative study, measurements were carried out in the temperature range 243 K - 403 K at frequencies ranging from 1 kHz - 1 MHz on irradiated and nonirradiated nonlinear samples. It was obs erved that the mechanism of dielectric behaviour varied with frequency , temperature and ion irradiation. Further, implantation produced erra tic variation in the conductivity both in the intrinsic and extrinsic regions, and also in the dielectric behaviour of the substance. The pr operty of sensitive dependence on initial conditions, namely, chaos ha d set in after ion irradiation. However, the doping effect had not com pletely terminated the above transition, leading to chaos in the nonli near medium.