EVALUATION OF THE E(31) PIEZOELECTRIC CON STANT FOR PZT THIN-FILMS

Evaluation of the e(31) piezoelectric constant for PZT thin films. In this study, we use the beam method to determine the e(31), piezoelectr ic constant of PZT thin films. This technique to show a piezoelectric effect before the poling treatment of the films. We propose proceeding s measure the piezoelectric loop, the only one possible to avoid an as ymetry of the loop. The e(31) value, after an optimized poling treatme nt of PZT films, deposited on silicon by rf sputtering, are -2.5 C/m(2 ).