FORMATION OF CUBIC BORON-NITRIDE BY THE REACTIVE SPUTTER-DEPOSITION OF BORON

Citation
Af. Jankowski et al., FORMATION OF CUBIC BORON-NITRIDE BY THE REACTIVE SPUTTER-DEPOSITION OF BORON, Thin solid films, 308, 1997, pp. 94-100
Citations number
44
Journal title
ISSN journal
00406090
Volume
308
Year of publication
1997
Pages
94 - 100
Database
ISI
SICI code
0040-6090(1997)308:<94:FOCBBT>2.0.ZU;2-G
Abstract
Boron nitride films are synthesized by rf magnetron sputtering baron t argets where the deposition parameters of gas pressure, flow and compo sition are varied along with substrate temperature and applied bias. T he films are analyzed using Anger electron spectroscopy, transmission electron microscopy, nanoindentation, Raman spectroscopy and X-ray abs orption spectroscopy. These techniques provide characterization of fil m composition, crystalline structure, hardness and chemical bending, r espectively. Reactive, rf-sputtering process parameters are establishe d which lead to the growth of crystalline boron nitride (BN) phases. T he deposition of stable and adherent baron nitride coatings consisting of the cubic phase requires 400 degrees C substrate heating and the a pplication of a 300-V negative bias. Published by Elsevier Science S.A .