METALLIZATION OF CVD DIAMOND FILMS BY CATHODIC ARC DEPOSITION

Reliable metallization schemes for chemical vapor deposited diamond ar e critical for expanding the use of diamond components in electronics and optics. We present here the results of our investigation of severa l metallization schemes produced by cathodic are deposition. The depos ition process also allows the control of the metal ion energy, and thi s is used to promote good adhesion between film and substrate. Films o f Mo, Cu, Ta and W with thickness varying between 50 and 1000 nm were deposited on free-standing smooth diamond substrates and annealed at t emperatures between 200 degrees C and 900 degrees C. Interdiffusion an d solid state reactions between carbon and the deposited metal were st udied using backscattering spectrometry and X-ray diffraction. Of the films tested, W was the only one virtually unaffected by annealing at all temperatures. Upon annealing at 200 degrees C all metal films rema ined intact and did not delaminate. (C) 1997 Elsevier Science S.A.