INVESTIGATION OF DISTRIBUTION OF DEFECTS AND IMPURITIES IN BORON-DOPED CVD DIAMOND FILM BY CATHODOLUMINESCENCE SPECTROSCOPY

Distribution of defects and impurities was investigated by cathodolumi nescence spectroscopy on as-grown boron-doped diamond film synthesized by microwave plasma chemical vapor deposition method. Luminescence pr ofiles in a boron-doped diamond film were observed by cross-section CL images. Intense emission of 535 nm (similar to 2.32 eV) band was foun d in a thin layer of the growth surface and in a rather thick layer of interface to the silicon substrate. Complementary to the 535-nm emiss ion, the edge emission appeared in the bulk region excluding the surfa ce layer. The origination of the 535-nm band can be explained by a bor on-vacancy center. (C) 1997 Elsevier Science S.A.