CMP COO REDUCTION - SLURRY REPROCESSING

Initial results of chemical mechanical planarization (CMP) of 8 inch d iameter thermal oxide (TOX) and TEOS sheet film semiconductor wafers u sing CMP slurry that have been reprocessed are presented. The slurry i s reprocessed in an on-line system that has been fitted onto an IPEC P lanar model 472 CMP system. Slurry consumption during the testing was at one-fifth of normal CMP slurry consumption for the system. CMP resu lts showed no differences between wafers polished with 100% fresh slur ry and those polished with reprocessed slurry. (C) 1997 Elsevier Scien ce S.A.