EFFECTS OF UNDERLYING FILMS ON THE CHEMICAL-MECHANICAL POLISHING FOR SHALLOW TRENCH ISOLATION TECHNOLOGY

The effects of underlying films on the chemical-mechanical polishing ( CMP) removal rate have been studied and characterized. A model for the underlying film mechanical properties such as hardness and Young's mo dulus, relating to the polishing removal rate was proposed. In additio n, a modified shallow trench isolation (STI) process with a thin nitri de overcoat has been suggested to eliminate the dishing and oxide rema ining on nitride issues. Furthermore, in order to minimize the residua l particles and metallic contamination, a modified multi-chemical spra y-cleaning process provided for the post-STI CMP cleaning was also stu died. (C) 1997 Elsevier Science S.A.