CHARACTERIZATION OF TIN FILM GROWN BY LOW-PRESSURE-CHEMICAL-VAPOR-DEPOSITION

Conformal TiN films were deposited by thermal low-pressure-chemical-va por-deposition (LPCVD) in a rotating disk reactor, using TiCl4 and NH3 with N-2 as a dilution gas. TiN plug with 0.05 mu m contact size was achieved. No void formation was observed in the TiN plug. The result d emonstrated that LPCVD-TiN can be used to fill very small contact hole s. The excellent step coverage and uniformity resulted from a surface- reaction-rate-limited deposition. The resistivity of TiN film was redu ced to 133 mu Omega cm by in-situ NH3 plasma post-treatment. The conce ntration of chlorine in the TiN him was measured to be less than 2 ato mic % (at.%) by Auger electron spectroscope measurement. For Al deposi ted on TiN, the Al orientation was found to be dependent on the deposi tion method of Al film, but not on the underlying TiN orientation. (C) 1997 Elsevier Science S.A.