ELECTRONIC-PROPERTIES OF CARBON NANOTUBES CONTAINING DEFECTS

Citation
P. Lambin et al., ELECTRONIC-PROPERTIES OF CARBON NANOTUBES CONTAINING DEFECTS, Journal of physics and chemistry of solids, 58(11), 1997, pp. 1833-1837
Citations number
31
ISSN journal
00223697
Volume
58
Issue
11
Year of publication
1997
Pages
1833 - 1837
Database
ISI
SICI code
0022-3697(1997)58:11<1833:EOCNCD>2.0.ZU;2-D
Abstract
The electronic structure of carbon nanotubes containing defects is inv estigated within a tight-binding framework. The electronic properties of the following defects are examined: (a) a hemispheric cap ending a (10, 10) tubule, (b) a pair of pentagon and heptagon aligned along the same side of the tube, which widens the diameter, (c) a pair of diame trically-opposed heptagon and pentagon, which bends de structure, and (d) sp(3)-like lines responsible for polygonization. In cases (a)-(c), a structural optimization was performed, either by minimization of a valence-force field adapted to the carbon network or by tight-binding molecular dynamics. (C) 1997 Elsevier Science Ltd.