TRANSPORT IN CRYSTALLINE SILICON-POROUS SILICON JUNCTIONS

Authors
NARASIMHAN KL
Citation
Kl. Narasimhan, TRANSPORT IN CRYSTALLINE SILICON-POROUS SILICON JUNCTIONS, Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 77(1), 1998, pp. 75-84
Citations number
18
Categorie Soggetti
Physics, Applied",Mechanics,"Physics, Condensed Matter","Material Science
Journal title
Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic → ACNP
ISSN journal
13642812
Volume
77
Issue
1
Year of publication
1998
Pages
75 - 84
Database
ISI
SICI code
1364-2812(1998)77:1<75:TICSSJ>2.0.ZU;2-1
Abstract
In this paper, we have investigated the current-voltage (I-V) characte ristics of crystalline Si (c-Si)/porous Si/metal structures for differ ent substrate resistivities from 0.01 to 75 Omega cm. We find that the I-V characteristics for low-resistivity samples are nonlinear and pse udosymmetric. For samples with a substrate resistivity greater than 1 Omega cm, the I-V characteristics exhibit rectifying behaviour. The I- V characteristics of the latter samples are weakly dependent on temper ature. We present a model which invokes tunnelling to explain electron ic transport in this system.