THE EFFECT OF HIGH MAGNETIC-FIELDS ON JUNCTION FIELD-EFFECT TRANSISTOR DEVICE PERFORMANCE

We report measurements of the characteristics of a junction field effe ct transistor (JFET) in applied magnetic fields up to 30 T. For orient ations parallel to the applied field, the device maintained a high tra nsconductance (g(fs)) close to 80% of the zero field value. For field orientations perpendicular to the plane of current transport, g(fs) de creased by a factor of 6 at 30 T. This field dependence can be underst ood quantitatively in terms of the magnetoresistance associated with t he cyclotron motion of current carriers within the conductive channels of the JFET. The results show that for suitable orientations the JFET may be used ''in situ'' for applications in very high fields. (C) 199 8 American Institute of Physics.