DETERMINATION OF THE DRIFT VELOCITY OF SATURATION AND THE COEFFICIENTS OF IMPACT IONIZATION OF CARRIERS IN SEMICONDUCTORS WITH THE HELP OF THE MICROWAVE CHARACTERISTICS OF AVALANCHE-DIODES
Aa. Levites et Ai. Smetanin, DETERMINATION OF THE DRIFT VELOCITY OF SATURATION AND THE COEFFICIENTS OF IMPACT IONIZATION OF CARRIERS IN SEMICONDUCTORS WITH THE HELP OF THE MICROWAVE CHARACTERISTICS OF AVALANCHE-DIODES, Journal of communications technology & electronics, 42(12), 1997, pp. 1423-1428
Two methods are proposed for determination of the constants in the exp
onential approximation of the dependence alpha(E) and the values of th
e drift velocity of saturation of carriers in a semiconductor at the t
emperature T = 400-500 K. They are based on the dependences of the act
ive and reactive components of the small-signal impedance of the semic
onductor structure (SS) of the avalanche transit-time (IMPATT) diodes
on the operating frequency and the dependences of the characteristic f
requencies on the diode feeding current. The suitability of these tech
niques is confirmed by the qualitative agreement between the measured
and calculated IMPATT characteristics.