DETERMINATION OF THE DRIFT VELOCITY OF SATURATION AND THE COEFFICIENTS OF IMPACT IONIZATION OF CARRIERS IN SEMICONDUCTORS WITH THE HELP OF THE MICROWAVE CHARACTERISTICS OF AVALANCHE-DIODES

Two methods are proposed for determination of the constants in the exp onential approximation of the dependence alpha(E) and the values of th e drift velocity of saturation of carriers in a semiconductor at the t emperature T = 400-500 K. They are based on the dependences of the act ive and reactive components of the small-signal impedance of the semic onductor structure (SS) of the avalanche transit-time (IMPATT) diodes on the operating frequency and the dependences of the characteristic f requencies on the diode feeding current. The suitability of these tech niques is confirmed by the qualitative agreement between the measured and calculated IMPATT characteristics.