ON THE APPLICATION OF 2D POTENTIAL-THEORY TO ELECTROSTATIC SIMULATION

Citation
F. Shi et al., ON THE APPLICATION OF 2D POTENTIAL-THEORY TO ELECTROSTATIC SIMULATION, Communications in numerical methods in engineering, 11(8), 1995, pp. 691-701
Citations number
9
Categorie Soggetti
Mathematical Method, Physical Science",Mathematics,Engineering
ISSN journal
10698299
Volume
11
Issue
8
Year of publication
1995
Pages
691 - 701
Database
ISI
SICI code
1069-8299(1995)11:8<691:OTAO2P>2.0.ZU;2-8
Abstract
Computing the charge density on the surfaces of conductors is fundamen tal to many electrostatic applications, Difficulties arise in two-dime nsional simulation due to the O(log\\r\\) potential. Fully understandi ng the 2D potential problem, and reasonably connecting the mathematica l formulation with physical interpretation, are key to handling this d ifficulty properly. In the absence of these factors it is easy for one to propose an ill-posed problem. In this paper, a complete investigat ion of potential theory, from 3D to 2D, is made for computing charge d ensity on the surfaces of conductors, Various integral formulations ar e derived - these are applicable in different situations. It is shown that, in general, the electrostatic potential need not be finite value d at infinity for 2D problems. Numerical examples for the 2D case are constructed to show that the formulations are consistent. Criteria for choosing the most appropriate formulation for a given problem are sug gested.