DEFECTS IN EPITAXIAL LAYERS OF COMPOUND SEMICONDUCTORS GROWN BY OMVPEAND MBE TECHNIQUES

Authors
MAHAJAN S
Citation
S. Mahajan, DEFECTS IN EPITAXIAL LAYERS OF COMPOUND SEMICONDUCTORS GROWN BY OMVPEAND MBE TECHNIQUES, Progress in Materials Science, 42(1-4), 1997, pp. 341-355
Citations number
29
Journal title
Progress in Materials Science → ACNP
ISSN journal
00796425
Volume
42
Issue
1-4
Year of publication
1997
Pages
341 - 355
Database
ISI
SICI code
0079-6425(1997)42:1-4<341:DIELOC>2.0.ZU;2-0