WIDE-BAND ON-WAFER NOISE MEASUREMENT SETUP FOR NOISE CHARACTERIZATIONOF ACTIVE DEVICES IN THE LOW VHF BAND

This paper addresses a new wideband on-wafer measurement test set desi gned for noise characterization of microwave active devices over the f requency range of 300 kHz to 150 MHz. Noise parameters obtained from t he multiple impedance technique on a GaAlAs/GaAs heterojunction bipola r transistor (HBT) from 300 kHz to 70 MHz are reported and compared wi th low-frequency noise data. Investigation of the excess noise sources of III-V HBT's is performed well above the 100 kHz frequency limit of standard dynamic signal analyzers and noise modeling of these devices is reported.