Yt. Wang et al., DOUBLE-CRYSTAL X-RAY-DIFFRACTION STUDY OF MBE SELF-ORGANIZED INAS QUANTUM DOTS, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 41(2), 1998, pp. 172-176
A series of GaAs/InAs/GaAs samples were studied by double crystal X-ra
y diffraction and the X-ray dynamic theory was used to analyze the X-r
ay diffraction results. As the thickness of InAs layer exceeds 1.7 mon
olayer, 3-dimensional InAs islands appear. Pendellosung fringes shifte
d. A multilayer structure model is proposed to describe the strain sta
tus in the InAs islands of the sample and a good agreement is obtained
between the experimental and theoretical curves.