Dn. Sheng et Zy. Weng, NEW UNIVERSALITY OF THE METAL-INSULATOR-TRANSITION IN AN INTEGER QUANTUM HALL-EFFECT SYSTEM, Physical review letters, 80(3), 1998, pp. 580-583
A new universality of the metal-insulator transition in an integer qua
ntum Hall effect (IQHE) system is studied based on a lattice mode], wh
ere the IQHE states exist only within a finite range of Fermi energy i
n the presence of disorders. A two-parameter scaling law is found at t
he high-energy boundary where direct transitions from high filling-fac
tor IQHE states to an insulator occur. We find that rho(xx) = rho(xy)
at the critical point whose value can continuously vary as a single fu
nction of the Landau-level filling number n(v). Such a new universalit
y well explains the recent experiment by Song et al.