HIGH-POWER MICROWAVE 0.25-MU-M GATE DOPED-CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/

We report on the high-power performance of the 0.25-mu m gate Doped-Ch annel GaN/AIGaN Heterostructure Field Effect Transistors (DC-HFET's), At a drain bias voltage of 18 V and drain bias current of 46 mA, these 100-mu m wide devices exhibit high gain at 8.4 GHz with a power densi ty reaching 1.73 W/mm. The de,ices also display high gain at moderate power over a wide range of frequencies, This high gain at high frequen cy is a result of an optimal doping level in the AIGaN layer that give s rise to a high sheet charge density while maintaining a high-channel electron mobility. These results demonstrate the excellent microwave power capability of the GaN/AIGaN based heterostructure field effect t ransistors.