ELECTRON-IRRADIATION-INDUCED DEEP-LEVEL IN N-TYPE GAN

Authors
FANG ZQ HEMSKY JW LOOK DC MACK MP
Citation
Zq. Fang et al., ELECTRON-IRRADIATION-INDUCED DEEP-LEVEL IN N-TYPE GAN, Applied physics letters, 72(4), 1998, pp. 448-449
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
4
Year of publication
1998
Pages
448 - 449
Database
ISI
SICI code
0003-6951(1998)72:4<448:EDING>2.0.ZU;2-L
Abstract
Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at E-C-0.18 eV. The production rate is approximately 0.2 cm(-1), lower than the rate of 1 cm(-1) found for the N vacancy by Wa ll-effect studies. The defect trap cannot be firmly identified at this time. (C) 1998 American Institute of Physics.