HIGH BIAS TRANSPORT AND MAGNETOMETER DESIGN IN OPEN QUANTUM DOTS

Citation
M. Switkes et al., HIGH BIAS TRANSPORT AND MAGNETOMETER DESIGN IN OPEN QUANTUM DOTS, Applied physics letters, 72(4), 1998, pp. 471-473
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
4
Year of publication
1998
Pages
471 - 473
Database
ISI
SICI code
0003-6951(1998)72:4<471:HBTAMD>2.0.ZU;2-P
Abstract
We report transport measurements as a function of bias in open semicon ductor quantum dots. These measurements are well described by an effec tive electron temperature derived from Joule heating at the point cont acts and cooling by Wiedemann-Franz out-diffusion of thermal electrons . Using this model, we propose and analyze a quantum dot based sensor capable of measuring absolute magnetic field at micron scales with a n oise floor of similar to 110 nT/root Hz at 300 mK. Non optimized measu rements reported here are similar to 2 orders of magnitude above this floor. (C) 1998 American Institute of Physics.