2-STEP PROCESS FOR IMPROVED DIAMOND DEPOSITION ON TITANIUM-ALLOYS AT MODERATE TEMPERATURE

Citation
L. Vandenbulcke et al., 2-STEP PROCESS FOR IMPROVED DIAMOND DEPOSITION ON TITANIUM-ALLOYS AT MODERATE TEMPERATURE, Applied physics letters, 72(4), 1998, pp. 501-503
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
4
Year of publication
1998
Pages
501 - 503
Database
ISI
SICI code
0003-6951(1998)72:4<501:2PFIDD>2.0.ZU;2-H
Abstract
A simple two-step process is reported here to deposit diamond coatings on titanium alloys at temperatures equal to or lower than 600 degrees C. The first step allows us to increase the carbon nucleation rate an d to deposit a sacrificial layer which contains more than about 25% sp (2) carbon. Its thickness is selected both to limit the interaction of titanium element with the plasmas used for diamond growth during all the second step, even when an oxygen-containing mixture is used, and t o diffuse completely at the end of the process. After the first step, the formation of titanium carbide is observed by x-ray diffraction and x-ray photoelectron spectroscopy, which does not reveal any oxygen in corporation in the coating-substrate interfacial region. These results are related to the final strong diamond adherence. (C) 1998 American Institute of Physics.