MAPPING OF SURFACE-POTENTIALS BY ELECTRONS ON A HELIUM FILM

Citation
E. Teske et al., MAPPING OF SURFACE-POTENTIALS BY ELECTRONS ON A HELIUM FILM, Journal of low temperature physics, 110(1-2), 1998, pp. 249-254
Citations number
7
Categorie Soggetti
Physics, Applied
ISSN journal
00222291
Volume
110
Issue
1-2
Year of publication
1998
Pages
249 - 254
Database
ISI
SICI code
0022-2291(1998)110:1-2<249:MOSBEO>2.0.ZU;2-K
Abstract
A novel way to investigate perturbations of the electrostatic potentia l across a sample surface is presented, aiming at application in 2D co ntact phenomena. The idea is to deposit surface state electrons (SSE) on a thin layer of liquid helium covering the surface of a solid state sample. The density of the SSE adjusts to screen perturbations of the electrostatic potential across the sample. As a result, the helium la yer thickness varies due to the variation of the electrostatic pressur e, thus providing a map. This ma?, may be read interferometrically by a technique already employed for the investigation of multi-electron d imples on helium. We realized this mapping for a structured metal elec trode as a test sample to investigate the resolution of the method.