INSULATOR PASSIVATION OF IN0.2GA0.8AS-GAAS SURFACE QUANTUM-WELLS

The electronic passivation of (100) In0.2Ga0.8As-GaAs surface quantum wells (QW's) using in situ deposition of an amorphous, insulating Ga2O 3 film has been investigated and compared to standard Al0.45Ga0.55As p assivation. Nonradiative lifetimes tau(r), = 1.1 +/- 0.2 and 1.2 +/- 0 .2 ns have been inferred from the dependence of the internal quantum e fficiency eta on optical excitation density P-0' for the GazO(3) and A l0.45Ga0.55As passivated In0.2Ga0.8As-GaAs surface QW, respectively, B eyond identical internal quantum efficiency, the amorphous Ga2O3 insul ator passivation simplifies device processing, eludes problems arising from lattice-mismatched interfaces, and virtually eliminates band ben ding in electronic and optoelectronic devices based on a low dimension al system such as quantum wells, wires, and dots.