LEAD CHALCOGENIDE MIDINFRARED DIODE-LASERS FABRICATED BY ION-IMPLANTATION

Citation
J. Xu et al., LEAD CHALCOGENIDE MIDINFRARED DIODE-LASERS FABRICATED BY ION-IMPLANTATION, IEEE photonics technology letters, 10(2), 1998, pp. 206-208
Citations number
18
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
10
Issue
2
Year of publication
1998
Pages
206 - 208
Database
ISI
SICI code
1041-1135(1998)10:2<206:LCMDFB>2.0.ZU;2-L
Abstract
Ar+ implanted PbSe mid-infrared (MIR) lasers have been fabricated, cha racterized, and analyzed. For the first time, the operation of ion-imp lanted lead-salt mid-infrared diode lasers in continuous-wave (CW) mod e at temperatures above 77 K was achieved, The maximum operating tempe ratures of 115 K in CW mode and 155 K in pulse mode were reached, Thes e lasers have high output power, low linewidth, and small tuning rate, as well as comparatively low threshold currents, These promising prop erties demonstrated that ion-implanted MIR lasers are competitive cand idates as tunable sources in the applications of high-resolution spect roscopy and trace-gas analysis.