GAS SENSITIVITY OF INP EPITAXIAL THIN-LAYERS

Authors
BATTUT V BLANC JP MALEYSSON C
Citation
V. Battut et al., GAS SENSITIVITY OF INP EPITAXIAL THIN-LAYERS, Sensors and actuators. B, Chemical, 44(1-3), 1997, pp. 503-506
Citations number
7
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
44
Issue
1-3
Year of publication
1997
Pages
503 - 506
Database
ISI
SICI code
0925-4005(1997)44:1-3<503:GSOIET>2.0.ZU;2-C
Abstract
The resistance of n-InP epitaxial layers is shown to increase or decre ase in the presence of oxidizing (O-2,, NO2) or reducing (NH3) gases, respectively. The magnitude of resistance variations depends on gas co ncentration, on InP layer thickness and on temperature. Interpretation is based on field effect mechanisms resulting from ionization of surf ace-chemisorbed gas molecules. Gas sensing devices are considered. (C) 1997 Elsevier Science S.A.