The temporal behavior of the electroluminescence (EL) from thin-film i
ndium-tin-oxide (ITO)/aromatic diamine (TPD)/Al(III) s-hydroxyquinolin
e (Alq(3))/Mg/Ag light-emitting diodes (LEDs) upon the application of
a rectangular driving voltage is analyzed in terms of the electron-hol
e recombination on the TPD/Alq(3) interface. From the long-time compon
ent of the temporal decay of the EL intensity the electron-hole recomb
ination coefficient gamma=(1.1+/-0.5)x10(-10) cm(3)/s is determined in
good agreement with the value expected on the basis of the Langevin t
heory of recombination with the recombination process controlled by th
e motion of holes in the hole-transporting TPD layer of the LED. (C) 1
998 American Institute of Physics.