LATERAL CONFINEMENT IN ZNSE ZNCDSE QUANTUM-WELLS GROWN ON PATTERNED SUBSTRATES/

Authors
HEISS W STIFTER D PRECHTL G BONANNI A SITTER H LIU J TOTH L BARNA A
Citation
W. Heiss et al., LATERAL CONFINEMENT IN ZNSE ZNCDSE QUANTUM-WELLS GROWN ON PATTERNED SUBSTRATES/, Applied physics letters, 72(5), 1998, pp. 575-577
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
5
Year of publication
1998
Pages
575 - 577
Database
ISI
SICI code
0003-6951(1998)72:5<575:LCIZZQ>2.0.ZU;2-7
Abstract
ZnSe/Zn0.75Cd0.25Se quantum wells have been grown on GaAs submicron gr atings. In these quantum structures, we observe an optical anisotropy induced by lateral confinement. Photoluminescence (PL) energy-shifts a nd the PL temperature dependence indicate a moderate modulation of the two-dimensional electron gas in the quantum well. (C) 1998 American I nstitute of Physics.