ANNEALING EFFECT ON CONCENTRATION OF EL6-LIKE DEEP-LEVEL STATE IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS

Authors
DARMO J DUBECKY F KORDOS P FORSTER A
Citation
J. Darmo et al., ANNEALING EFFECT ON CONCENTRATION OF EL6-LIKE DEEP-LEVEL STATE IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS, Applied physics letters, 72(5), 1998, pp. 590-592
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
5
Year of publication
1998
Pages
590 - 592
Database
ISI
SICI code
0003-6951(1998)72:5<590:AEOCOE>2.0.ZU;2-A
Abstract
A deep-level donor state with signatures similar to the EL6 level obse rved in low-temperature-grown molecular beam epitaxial (MBE) GaAs grow n at 250 degrees C and annealed in the temperature range 310-370 degre es C was studied. The annealing kinetics of this level suggest a confi ned pair recombination, likely V-Ga and As-i. A correlation between th e deep level observed and recently published photoluminescence data of low-temperature-grown MBE GaAs is found. (C) 1998 American Institute of Physics.